document number: 86005 for technical ques tions within your region, please cont act one of the following: www.vishay.com rev. 1.7, 25-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 105 fast avalanche sinterglass diode by268, by269 vishay semiconductors mechanical data case: sod-57 terminals: plated axial leads, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: approx. 369 mg features ? glass passivated junction ? hermetically sealed package ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? high voltage fast rectification diode 949539 parts table part type differe ntiation package by268 v r = 1400 v; i fav = 0.8 a sod-57 by269 v r = 1600 v; i fav = 0.8 a sod-57 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition part symbol value unit peak reverse voltage, non repetitive by268 v rsm 1600 v by269 v rsm 1800 v reverse voltage see electrical characteristics by268 v r 1400 v by269 v r 1600 v peak forward surge current t p = 10 ms, half sine wave i fsm 20 a average forward current i fav 0.8 a non repetitive reverse avalanche energy i (br)r = 0.4 a e r 10 mj junction and storage temperature range t j = t stg - 55 to + 175 c maximum thermal resistance (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit junction ambient lead length l = 10 mm, t l = constant r thja 45 k/w on pc board with spacing 25 mm r thja 100 k/w
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 86005 106 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com rev. 1.7, 25-aug-10 by268, by269 vishay semiconductors fast avalanche sinterglass diode typical characteristics (t amb = 25 ? c, unless otherwise specified) fig. 1 - max. thermal re sistance vs. lead length fig. 2 - max. forward current vs. forward voltage fig. 3 - max. average forward current vs. ambient temperature fig. 4 - max. reverse curr ent vs. junction temperature electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit forward voltage i f = 0.4 a v f --1.25v reverse current v r = 1400 v by268 i r -12a v r = 1600 v by269 i r -12a v r = 1400 v, t j = 100 c by268 i r - - 15 a v r = 1600 v, t j = 100 c by269 i r - - 15 a reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a t rr - - 400 ns 0 5 10 15 20 25 30 0 20 40 60 80 120 r thja - thermal re s i s t. junction/ambeint (k/w) i - lead length (mm) 949090 100 ll t l = con s tant i f - forward current (a) 0.001 0.01 0.1 1 10 0 0.5 1.0 1.5 2.0 2.5 v f - forward voltage (v) 16412 t j = 25 c t j = 175 c 16413 i fav - average forward current (a) 0 20 40 60 80 100 120 140 160 180 t amb - ambient temperature (c) 0.9 0.7 0.5 0.8 0.6 0.4 0.3 0.2 0.1 0 v r = v rrm half s inewave r thja = 100 k/w pcb: d = 25 mm r thja = 45 k/w i = 10 mm 1 10 100 1000 25 50 75 100 125 150 175 t j - junction temperature (c) 16414 i r - rever s e current (a) v r = v rrm
by268, by269 fast avalanche sinterglass diode vishay semiconductors document number: 86005 for technical ques tions within your region, please cont act one of the following: www.vishay.com rev. 1.7, 25-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 107 fig. 5 - max. reverse power dissipat ion vs. junction te mperature fig. 6 - diode capacitance vs. reverse voltage package dimensions in millimeters (inches): sod-57 0 100 500 200 600 300 700 400 800 900 25 50 75 100 125 150 175 t j - junction temperature (c) 16415 p r - rever s e power di ss ipation (mw) v r = v rrm p r -limit at 100 % v r p r -limit at 80 % v r 0 5 10 15 20 25 30 35 0.1 1 10 100 v r - rever s e voltage (v) 16416 c d - diode capacitance (pf) f = 1 mhz 20543 3.6 (0.142) max. 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 0.82 (0.032) max.
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